Method for localized masking for semiconductor structure development

ABSTRACT

Container structures for use in integrated circuits and methods of their manufacture without the use of mechanical planarization such as chemical-mechanical planarization (CMP), thus eliminating CMP-induced defects and variations. The methods utilize localized masking of holes for protection of the inside of the holes during non-mechanical removal of exposed surface layers. The localized masking is accomplished through differential exposure of a resist layer to electromagnetic or thermal energy. The container structures are adapted for use in memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.

TECHNICAL FIELD

The present invention relates generally to development of semiconductorstructures and in particular to development of semiconductor containerstructures using localized masking techniques.

BACKGROUND

Semiconductors are used extensively in today's electronic devices. Theirminiature size and low power requirements enable highly complex circuitsto be used in places never before thought possible. This has led to thedevelopment of systems with the speed and power to make our lives easierwithout encumbering us with bulky boxes and power-hungry electronics.One of the keys to both light weight and energy efficiency is the tinysize of the circuitry. With each new generation of circuit technology,comes smaller and smaller device sizes.

Many electronic systems include a memory device, such as a DynamicRandom Access Memory (DRAM), to store data. A typical DRAM includes anarray of memory cells. Each memory cell includes a capacitor that storesthe data in the cell and a transistor that controls access to the data.The capacitor includes two conductive plates. The top plate of eachcapacitor is typically shared, or common, with each of the othercapacitors. This plate is referred to as the “top cell plate.” Thecharge stored across the capacitor is representative of a data bit andcan be either a high voltage or a low voltage.

Data can be either stored in the memory cells during a write mode, ordata may be retrieved from the memory cells during a read mode. The datais transmitted on signal lines, referred to as digit lines, which arecoupled to input/output (I/O) lines through transistors used asswitching devices. Typically, for each bit of data stored, its truelogic state is available on an I/O line and its complementary logicstate is available on an I/O complement line. Thus, each such memorycell has two digit lines, digit and digit complement.

Typically, the memory cells are arranged in an array and each cell hasan address identifying its location in the array. The array includes aconfiguration of intersecting conductive lines, and memory cells areassociated with the intersections of the lines. In order to read from orwrite to a cell, the particular cell in question must be selected, oraddressed. The address for the selected cell is represented by inputsignals to a word line decoder and to a digit line decoder. The wordline decoder activates a word line in response to the word line address.The selected word line activates the access transistors for each of thememory cells in communication with the selected word line. The digitline decoder selects a digit line pair in response to the digit lineaddress. For a read operation, the selected word line activates theaccess transistors for a given word line address, and data is latched tothe digit line pairs.

Some circuit devices utilize “container” structures, and such containerstructures are often utilized as a capacitor for a memory cell due totheir efficient use of semiconductor die real estate. After formation,these container structures look like tiny holes within the surroundingmaterial. They will generally have a closed bottom, an open top andsidewalls extending between the closed bottom and open top. Typically,containers that will be formed into capacitor structures will havedimensions that are taller than they are wide, often referred to as a“high aspect-ratio.” This high aspect-ratio of container capacitors canallow the capacitor to store more energy while maintaining the sametwo-dimensional surface area. Conversely, the diameter of the hole canbe reduced with no impact on energy storage to reduce the requiredsurface area for the device. This allows for faster, smaller, and moreenergy-efficient devices to be constructed.

In order to further increase a container capacitor's ability to storeenergy, semiconductor manufacturers have moved towards a technologyusing hemispherical grain (HSG) polysilicon. HSG polysilicon processingprovides a roughened surface, with individual grains of polysiliconprotruding from the surface of the film inside the container, therebyincreasing the effective surface area of the capacitor formed of thecontainer. The combination of using high aspect-ratio structures and HSGpolysilicon has produced semiconductors with much higher performancecharacteristics than previous structures, while maintaining the sameamount of die real estate.

HSG polysilicon processing typically involves a blanket formation of HSGpolysilicon over the entire surface of the supporting structure in whichthe containers are formed. Since the surface HSG polysilicon must beremoved to define the individual container capacitors, this progressionin technology has also introduced new problems to overcome, i.e.,removal of unwanted HSG polysilicon while minimizing the introduction ofdefects caused by the removal process.

For example, container capacitors are usually formed in an insulatingmaterial, such as borophosphosilicate glass (BPSG). Next, traditionalLow Pressure Chemical Vapor Deposition (LPCVD) processing deposits anHSG polysilicon layer over theentire support structure, including theinside of the container capacitor hole and as well as the entire surfaceof the support structure. The processing may also form HSG polysiliconon the backside of the support structure.

The HSG polysilicon on the surface and/or backside of the supportstructure is undesirable in the creation of container capacitors. Thetraditional method of removing the undesired HSG polysilicon uses aplanarization process such as chemical-mechanical planarization (CMP).However, concern has arisen over the fact that the CMP process itselfmay inherently cause defects such as chatter marks, scratches, residueand CMP-related particle defects that are left as a result of theslurry. These defects may produce performance characteristics making thesemiconductor structures unusable or of questionable quality andreliability.

Another concern of the CMP process is that grains of an HSG polysiliconsurface are fragile and can become dislodged during the mechanicalplanarization process. A dislodged HSG polysilicon grain that bridgesbetween two container capacitors may cause a cell-to-cell short leadingto charge leakage and resultant improper performance. To help protectagainst such failures, cell formation processing includes the use of afill material to mask and protect the container holes during CMP removalof surface HSG, as well as during subsequent removal of the surroundingBPSG. However, such techniques are not entirely effective against themechanical strains induced by CMP.

A method of forming a patterned seed layer in trenches has been proposedby Schinella et al. in U.S. Pat. No. 5,670,425 issued Sep. 23, 1997.Schinella et al. relates to the forming of local area interconnects inan integrated circuit structure by selective deposition of certainconductive metal compounds over a seed layer previously formed in one ormore trenches in an insulation layer wherein the one or more trencheshave been previously formed in a pattern conforming to the desiredinterconnect configuration, so that the objectionable step of patterninga blanket deposited layer of a conductive metal compound can beeliminated. In accordance with one embodiment of the invention ofSchinella et al., Sclhinelia et al. propose a process in which aphotoresist layer may be formed over an insulation layer and a seedlayer thereon which will flow into coated trenches as well as over theportions of the seed layer deposited over the top surface of theinsulation layer, forming a planar layer of photoresist. Schinella etal. then propose, in one embodiment, that to expose those portions ofthe seed layer not on a trench surface, the photoresist layer could bepartially exposed to light energy (to only expose the top portion of thephotoresist layer), and then conventionally developed to remove suchexposed top portions of the photoresist layer. The seed layer ofSchilnella et al. normally may comprise any electrically conductivematerial which is capable of promoting subsequent selective depositionand/or growth of a conductive metal compound thereon which is capable ofsuch selective deposition and/or growth. Although Schinella et al. doesnot address nor suggest the growth of HSG polysilicon on the seed layerof Schiniella et al., HSG polysilicon may be formed using an appropriateseed layer. However, use of a seed layer for formation of HSGpolysilicon results in a film that is stoichiometrically and/orphysically different from blanket-deposited HSG polysilicon.

As noted above, the fragile nature of the HSG polysilicon grain surfacerequires special handling to reduce defects. Furthermore, the currentpreferred industry method of HSG polysilicon removal involving CMP mayinherently introduce defects in the semiconductor structures. CMP mayalso result in dimensional variations in a cell array, as well asunwanted cross-wafer variation due to uneven removal rates. Accordingly,what is needed is a process that preserves the HSG polysilicon withinthe container capacitor while reducing defects and variations associatedwith the elimination of the surface and backside HSG polysilicon byconventional CMP.

SUMMARY

The present invention provides methods for developing semiconductorcontainer capacitors, and apparatus utilizing such container capacitors.The invention reduces the defects and cost normally incurred withchemical-mechanical planarization (CMP) processing of containercapacitors. The embodiments of the invention utilize localized maskingof the container holes by selective exposure of resist. Although thefollowing description is provided with reference to container capacitorsutilizing hemispherical grain (HSG) polysilicon, it will be recognizedby those skilled in the art that the methods presented herein areequally applicable to other semiconductor container structures andmaterials of construction, as well as other structures making use ofsuch localized masking.

In one embodiment, a resist layer is formed overlying a first supportlayer and filling a hole in the first support layer. The resistoverlying the surface of the first support layer is selectively removedby a method including exposing the resist layer to a level of energysufficient to fully expose and develop resist above the sidewalls of thehole, while leaving at least a portion of the resist in the holeunderexposed. In one embodiment, the resist layer is exposed to acontrolled dose of energy, wherein at least a portion of the resist inthe hole remains underexposed. In another embodiment, the resist layeris exposed using energy with an angled incident, wherein at least aportion of the resist in the hole remains underexposed. In a furtherembodiment, the resist layer is exposed using wave energy having awavelength generally incapable of penetrating the hole, wherein at leasta portion of the resist in the hole remains underexposed. In a stillfurther embodiment, the resist layer is exposed using energy with anangled incident and having a wavelength generally incapable ofpenetrating the hole, wherein at least a portion of the resist in thecontainer hole remains underexposed. In one embodiment, a second supportlayer is formed interposed between the resist layer and the firstsupport layer.

In another embodiment, a resist layer is formed overlying an insulatinglayer and filling a container hole. The resist overlying the surface ofthe insulating layer is selectively removed by a method includingexposing the resist layer to a level of energy sufficient to fullyexpose and develop resist above the sidewalls of the container hole,while leaving at least a portion of the resist in the container holeunderexposed. In one embodiment, the resist layer is exposed to acontrolled dose of energy, wherein at least a portion of the resist inthe container hole remains underexposed. In another embodiment, theresist layer is exposed using energy with an angled incident, wherein atleast a portion of the resist in the container hole remainsunderexposed. In a further embodiment, the resist layer is exposed usingat least some wave energy having a wavelength generally incapable ofpenetrating the container hole, wherein at least a portion of the resistin the container hole remains underexposed. In a still furtherembodiment, the resist layer is exposed using energy with an angledincident and having a wavelength generally incapable of penetrating thecontainer hole, wherein at least a portion of the resist in thecontainer hole remains underexposed. In one embodiment, a containerlayer is formed interposed between the resist layer and the insulatinglayer.

In another embodiment, a resist layer is formed overlying a firstsupport layer and filling a hole. The resist overlying the surface ofthe first support layer is selectively removed by a method includingconducting thermal energy to the hole at an effective transfer ratehigher than the effective transfer rate to the resist above the holesuch that the resist in the hole is selectively hardened or bakedrelative to the resist on the surface. In one embodiment, a secondsupport layer is formed interposed between the resist layer and thefirst support layer.

In yet another embodiment, a resist layer is formed overlying aninsulating layer and filling a container hole. The resist overlying thesurface of the insulating layer is selectively removed by a methodincluding conducting thermal energy to the container hole at aneffective transfer rate higher than the effective transfer rate to theresist above the container hole such that the resist in the containerhole is selectively hardened or baked relative to the resist on thesurface. In one embodiment, a container layer is formed interposedbetween the resist layer and the insulating layer.

In a further embodiment, a first resist layer is foxied overlying afirst support layer. The first resist layer is of a first resist type. Areticle is used to pattern the first resist layer to define a futurehole. Subsequent to formation of the hole and removal of the firstresist layer, a second resist layer is formed overlying the firstsupport layer and filling the hole. The second resist layer is of asecond resist type opposite the first resist type. The reticle isrealigned over the hole and the second resist layer is patterned.Because the second resist type is opposite the first resist type, andthe same reticle is used to pattern the second resist layer, an oppositepattern is produced in the second resist layer, thus forming a resistplug filling the hole and extending above the sidewalls of the hole. Inone embodiment, a second support layer is formed interposed between thesecond resist layer and the first support layer.

In a still further embodiment, a first resist layer is formed overlyingan insulating layer. The first resist layer is of a first resist type. Areticle is used to pattern the first resist layer to define a futurecontainer hole. Subsequent to formation of the container hole andremoval of the first resist layer, a second resist layer is formedoverlying the insulating layer and filling the container hole. Thesecond resist layer is of a second resist type opposite the first resisttype. The reticle is realigned over the container hole and the secondresist layer is patterned. Because the second resist type is oppositethe first resist type, and the same reticle is used to pattern thesecond resist layer, an opposite pattern is produced in the secondresist layer, thus forming a resist plug filling the container hole andextending above the sidewalls of the container. In one embodiment, acontainer layer is formed interposed between the second resist layer andthe insulating layer.

Further embodiments of the invention include semiconductor structuresproduced using one or more methods of the invention, as well asapparatus, devices, modules and systems making use of such semiconductorstructures. Such structures are devoid of CMP-induced variations anddefects.

It will be recognized that the methods of the various embodiments can becombined in practice, either concurrently or in succession. For example,controlled energy dosage may be combined with angled incident or energyhaving wavelengths generally incapable of penetrating the hole. Otherpermutations and combinations will be readily apparent to those skilledin the art.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1-7 are cross-sectional views of a wafer during various processingstages in accordance with one embodiment of the invention.

FIGS. 8-10 are cross-sectional views of a wafer during variousprocessing stages in accordance with another embodiment of theinvention.

FIG. 11 is a cross-sectional view of a wafer in accordance with yetanother embodiment of the invention.

FIG. 12 is a cross-sectional view of a wafer in accordance with stillanother embodiment of the invention.

FIGS. 13-19 are cross-sectional views of a wafer during variousprocessing stages in accordance with a further embodiment of theinvention.

FIG. 20 is a cross-sectional view of a memory cell container capacitorin accordance with an embodiment of the invention.

FIG. 21 is a block diagram of an integrated circuit memory device inaccordance with an embodiment of the invention.

FIG. 22 is an elevation view of a wafer containing semiconductor dies inaccordance with an embodiment of the invention.

FIG. 23 is a block diagram of an exemplary circuit module in accordancewith an embodiment of the invention.

FIG. 24 is a block diagram of an exemplary memory module in accordancewith an embodiment of the invention.

FIG. 25 is a block diagram of an exemplary electronic system inaccordance with an embodiment of the invention.

FIG. 26 is a block diagram of an exemplary memory system in accordancewith an embodiment of the invention.

FIG. 27 is a block diagram of an exemplary computer system in accordancewith an embodiment of the invention.

DESCRIPTION OF THE EMBODIMENTS

In the following detailed description of the preferred embodiments,reference is made to the accompanying drawings which form a part hereof,and in which is shown by way of illustration specific embodiments inwhich the inventions may be practiced. These embodiments are describedin sufficient detail to enable those skilled in the art to practice theinvention, and it is to be understood that other embodiments may beutilized and that process or mechanical changes may be made withoutdeparting from the scope of the present invention. The terms wafer andsubstrate used in the following description include any basesemiconductor structure. Both are to be understood as includingsilicon-on-sapphire (SOS) technology, silicon-on-insulator (SOI)technology, thin film transistor (TFT) technology, doped and undopedsemiconductors, epitaxial layers of a silicon supported by a basesemiconductor, as well as other semiconductor support structures wellknown to one skilled in the art. Furthermore, when reference is made toa wafer or substrate in the following description, previous processsteps may have been utilized to form regions/junction is in the basesemiconductor structure. The following detailed description is,therefore, not to be taken in a limiting sense, and the scope of thepresent invention is defined only by the appended claims.

Container Structures

In FIG. 1, after preparing a first support layer or, in this embodiment,insulating layer 10 and a buried contact 15 on the surface of asubstrate 5 using conventional processing, one or more holes 20 areformed in the insulating layer 10, exposing a portion of contact 15. Inthis embodiment, hole 20 is a container hole used in the formation of acontainer capacitor Container hole 20 has sidewalls defined by thesurrounding insulating layer 10.

Container holes 20 are generally formed over active areas of thesubstrate 5 when forming a container structure for a capacitor in anintegrated circuit. The processing for forming insulating layer 10 onthe surface of substrate 5, as well as the processing for formingcontainer holes 20 in insulating layer 10, are not detailed herein assuch methods are well known to those of ordinary skill in the art.

A second support layer or, in this embodiment, container layer 30 isthen formed on substrate 5 and insulating layer 10 in FIG. 2. Containerlayer 30 is preferably hemispherical grain polysilicon (HSG) when usedas a bottom plate of a capacitor. However, container layer 30 mayfurther include other materials, such as amorphous silicon andpolysilicon either singly or in combination. Similarly, insulating layer10 is preferably borophosphosilicate glass (BPSG) when container layer30 is used as a bottom plate of a capacitor, but insulating layer 10 mayinclude other insulative materials, such as oxides or nitrides.Container layer 30, when used as a bottom plate of a capacitor shouldfurther be conductively doped for conductivity at some stage in theprocessing. Such doping may occur at any stage such as concurrently withformation of container layer 30, after formation of container layer 30,after removal of unwanted material from container layer 30, or at someother processing stage.

Following deposition or formation of container layer 30, resist layer 40is formed overlying insulating layer 10 and container layer 30 as shownin FIG. 3. Resist layer 40 is preferably spun on. Typical thickness ofresist layer 40 may be 0.5 to 1.5 μm. Resist layer 40 contains a resistmaterial that is light or energy sensitive, such that resist materialreceiving exposure will have physical characteristics different fromresist material not receiving exposure. Such resist materials aretypically reactive to a specific set or range of energy types, e.g., aspecific set or range of wavelengths of light.

Resist layer 40 fills container holes 20 to protect them duringsubsequent processing. Resist layer 40 is preferably OIR-897-101photoresist produced by Olin Corporation or PFI 66A7 photoresistproduced Sumitomo Chemical Co. LTD as used herein, although theinvention is applicable to all photoresist compositions andtechnologies.

In FIG. 4, resist layer 40 is exposed to electromagnetic radiation orlight waves 55, typically UV light, of a type capable of exposing theresist material in resist layer 40. Resist layer 40 contains photoresistmaterial of a positive type, i.e., that which is more easily removed, ormore vulnerable to solvents, when exposed to light or energy.

The duration and intensity of exposure to waves 55 should be of a levelsuch that the resultant exposed resist portion 70 extends to containerlayer 30 on the surface of insulating layer 10, but such that anunderexposed resist portion 90 remains in container hole 20. Due to theincreased thickness of resist layer 40 above container hole 20, relativeto the thickness overlying the surface of insulating layer 10, theduration and intensity of exposure to waves 55 can be controlled tosufficiently expose all of resist layer 40 overlying the surface ofinsulating layer 10 to permit removal of exposed resist portion 70 usingconventional washing techniques, yet leave portions of resist layer 40in container hole 20 insufficiently exposed to permit ready removal ofunderexposed resist portion 90 under similar conditions. The preferredexposure is between approximately 125 mJ and 200 mJ for the preferredresist materials. Adjustments to these preferred conditions will benecessary based on the thickness of resist layer 40 overlying thesurface of insulating layer 10, the type of positive photoresistmaterial chosen and the desired depth 130 of underexposed resist portion90.

In FIG. 5, exposed resist portion 70 is removed conventionally, leavingunderexposed resist portion 90 in container hole 20. Uncovered portionsof container layer 30 are then removed in FIG. 6 without usineg CMP. Awet poly etch may be used where container layer 30 is HSG polysilicon.It is noted that the poly etch resulted in faster etch rates for dopedHSG polysilicon than undoped HSG polysilicon. Splits using 2.25% TMAH[tetramethylammonium hydroxide, N(CH₃)₄OH] were used to drive theselectivity towards etching undoped HSG polysilicon faster than dopedmaterial. Other non-mechanical removal techniques may be used, such asalternative etch processes or chemical dissolution. It is noted thatnon-mechanical processes offer an additional advantage over traditionalCMP removal of HSG polysilicon in that such non-mechanical processes arecapable of removing both surface HSG polysilicon and backside HSGpolysilicon simultaneously. CMP removal of surface HSG polysilicon mustbe followed by a separate removal of backside CMP as existing CMPprocesses are incapable of perforning simultaneous planarization of bothsides of the wafer.

Further processing may be performed to produce a container capacitor asshown in FIG. 7. The processing is well known and includes removal ofunderexposed resist portion 90 to expose the inside of the container,removal of a portion of insulating layer 10 to expose the outside of thecontainer, formation of a dielectric layer 260 and formation of a cellplate 270. Removal of underexposed resist portion 90 may include suchtraditional methods such as using a hydrogen peroxide and sulfuric acidsolution (“piranha etch” or “Carro's acid”).

In another embodiment, processing proceeds as shown in and describedwith reference to FIGS. 1-3. Rather than adjusting intensity andduration of waves 55, waves 55 are directed at the surface at anincident angle 60 relative to the surface. By using an angled incidentto expose the resist, intensity and duration of waves 55 become lesscontrolling of the exposure as the waves 55 are not capable of exposingsome portions of resist layer 40 inside container hole 20. Substrate 5is preferably rotated about an axis generally perpendicular with thesurface during exposure. Such rotation produces a cone-like structure inunderexposed resist portion 90, such that exposed resist depth 80 onopposing sidewalls of container hole 20 are approximately equal. As analternative, the source of waves 55 could be rotated about the same axiswhile the substrate 5 remains stationary to produce substantiallysimilar results.

The incident angle 60 is adjusted to control the depth of penetration ofthe waves 55 into the container hole 20. A representative penetratingwave 55A illustrates how a desired exposed resist depth 80 is achievedfor the container hole 20. Increasing the incident angle 60 willincrease the penetrating depth into the container hole and, thus,increase the amount of exposed resist in the container hole 20.

The penetration depth 80 can also be controlled by varying the angle 60in conjunction with variation of the wavelength of the waves 55. Alarger wavelength will decrease penetration into the container hole 20at a given incident angle. Similarly, if the wavelength is maintained,the penetration depth 80 can be increased by increasing the incidentangle 60. Accordingly, both aspects can be varied simultaneously toproduce a desired resist exposure in the container hole 20.

It should be recognized that because angle of incident has a significantimpact on penetration of waves 55 into container hole 20, the lightsource itself does not need to be a single wavelength source. Generally,the light source contains wavelengths within a spectral range that (a)are selective to the resist used, i.e., will produce the desiredreaction, and (b) will not penetrate the container at a given angle.Additional wavelengths that are not selective to the resist may bepresent, but need not be considered.

Remaining processing proceeds in like fashion to the precedingembodiment. Exposed resist portion 70 is removed as shown in FIG. 9.Uncovered portions of container layer 30 are removed as shown in FIG.10. And a container capacitor may be formed as shown in and describedwith reference to FIG. 7.

In still another embodiment, processing proceeds as shown in anddescribed with reference to FIGS. 1-3. Rather than adjusting intensityand duration of waves 55 as in FIG. 4, waves 210 are chosen to have awavelength 220 such that waves 210 are generally incapable ofpenetrating container hole 20. The absorption characteristics of theresist material can generally be described by the function:

Absorption=Amplitude*e ^(-αd)

where:

Amplitude is the amplitude of the waves; and

d is the depth of the resist at which absorption is determined.

Further, α is generally described by the function:

α≅4πk/λ

where:

k is the absorption coefficient of the resist material; and

λ is the wavelength 220 of the waves 210.

Accordingly, increases in k or decreases in λ can be used to limit thedepth of penetration by reducing absorption to a level that is too lowto sufficiently expose the resist at the depths in container hole 20 fora given intensity of waves 210. Increases in k are accomplished bychoosing a resist material having higher k values. Decreases in λ areaccomplished by choosing an energy source emitting appropriatewavelengths.

It will be recognized that few light sources produce a singlewavelength.

Accordingly, waves 210 may often contain wavelengths 220 capable ofpenetrating container holes 20. However, it will be recognized thatexposed resist portion 70 will receive exposure from all waves 210 andthat underexposed resist portion 90 will receive reduced exposure giventhat some waves 210 will be incapable of penetrating container hole 20.Furthermore, resist layer 40 must be a positive resist reactive to atleast some of the waves 210 having a wavelength 220. Where some waves210 are both capable of penetrating container hole 20 and of causing areaction in resist layer 40, controlled intensity and duration of waves210 should be used such that resist portion 90 does not receiveexcessive exposure.

This embodiment may make use of photolithography technology commonlythought of as outdated. As an example, G-linc photolithographytechnology can be used in this type of processing as resist materialsfor this technology have a relatively high k value. G-line generallyrefers to the 436 nm wavelength produced by a mercury light source, andhas generally fallen out of service in photolithography due toresolution limitations caused by the relatively large wavelength.

Furthermore, in this embodiment it is the wavelength that controls thedepth of penetration into container hole 20. Thus, the angle of thelight or energy source is not critical and an incoherent flood-typeexposure may be employed. A benefit of using a flood type exposure isthat an entire wafer, or multiple wafers, can be exposed at once,eliminating the necessity of expensive stepping technology andincreasing efficiency with resulting cost reduction. As one example,standard equipment used for bulk erasing of flash, typically a UVspectrum type of light source, can be used.

If a wavelength can interact and cause a change in the resist, then itmust be of a size that generally prohibits interaction of the resistinside the container holes. If the wavelength does not cause a change inthe resist, then it is unnecessary to filter it from the light source.Generally, the light source contains wavelengths within a spectral rangethat (a) are selective to the resist used and (b) will not penetrate thecontainer.

Upon exposure of resist layer 40, remaining processing proceeds in likefashion to the preceding embodiments. Exposed resist portion 70 isremoved then uncovered portions of container layer 30 are removed inlike fashion to that shown in and described with reference to FIGS. 5-6or 9-10. As in previous embodiments, a container capacitor may be formedas shown in and described with reference to FIG. 7.

In a further embodiment, processing proceeds as shown in and describedwith reference to FIGS. 1-3. Rather than adjusting intensity andduration of waves 55 as in FIG. 4, heat or other energy from an energysource 190 is directed from below contact hole 20. The energy source 190may utilize convective heat transfer or conductive heat transfer, or itmay produce electromagnetic radiation or other radiated energy to beabsorbed by the substrate 5. As shown in FIG. 12, waves 55 representingthe energy transfer are directed at substrate 5 from below contact hole20. The increase in thermal energy due to the absorption of waves 55 bysubstrate 5 will be transferred by conduction toward container hole 20.Resist layer 40 will absorb more thermal energy in container hole 20than it will above the surface of insulating layer 10 as the material incontainer hole 20 will have more surface area per volume for acceptingconductive energy transfer than material on the surface, as well as lesssurface area per volume for dissipation of absorbed energy. Accordingly,material in container hole 20 will be at a higher temperature thanmaterial at the surface until a steady state is reached. Thisdifferential of absorbed thermal energy and resultant temperaturedifferential in resist layer 40 can cause resist portion 95 to hardenmore than resist portion 75, permitting the subsequent removal of resistportion 75 through conventional washing techniques while leaving behindresist portion 95. It will be apparent that this embodiment does notrequire the use of a photoresist material, but can make use of anymaterial that hardens or becomes more resistant to washing ordissolution through the absorption of thermal energy or increase intemperature.

Upon hardening resist portion 95, remaining processing proceeds in likefashion to the preceding embodiments. Unhardened resist portion 75 isremoved then uncovered portions of container layer 30 are removed inlike fashion to that shown in and described with reference to FIGS. 5-6or 9-10. As in previous embodiments, a container capacitor may be formedas shown in and described with reference to FIG. 7.

In a still further embodiment, an insulating layer 10 and buried contact15 are formed on a substrate 5 through conventional processing in FIG.13. It will be trivial to those skilled in the art that insulating layer10 will be formed in at least two layers in order to form buried contact15 below the surface of insulating layer 10. Furthermore, first resistlayer 40 is formed overlying insulating layer 10. A reticle or mask 235is used to define a future container hole. Waves 232 are directed towardthe surface of first resist layer 40. Waves 232A are blocked by opaqueregions 237 on mask 235 while waves 232B are allowed to expose firstresist layer 40. As shown and used in FIG. 13, first resist layer 40 isa positive photoresist.

Upon development and washing, first resist layer 40 becomes patterned inFIG. 14 to define a future container hole. In FIG. 15, a portion ofinsulating layer 10 exposed by patterned first resist layer 40 isremoved to define container hole 20, and first resist layer 40 issubsequently removed. In FIG. 16, container layer 30 is formed overlyinginsulating layer 10 and lining container hole 20. In FIG. 17, secondresist layer 45 is formed overlying insulating layer 10 and fillingcontainer hole 20. In this embodiment, second resist layer 45 is of anopposite type to first resist layer 40, i.e., second resist layer 45 isa negative photoresist in this embodiment. Accordingly, exposed areas ofsecond resist layer 45 are more resistant to removal than unexposedareas of the resist.

In FIG. 18, the same mask 235 is realigned with container hole 20 andwaves 232 are directed toward the surface of second resist layer 45creating exposed resist portion 97 and underexposed resist portion 77.As second resist layer 45 is a negative resist in this embodiment, upondevelopment and washing of the second resist layer 45, only exposedresist portion 97 remains, as shown in FIG. 19.

Remaining processing proceeds in like fashion to the precedingembodiments. Uncovered portions of container layer 30 are removed inlike fashion to that shown in and described with reference to FIGS. 5-6or 9-10, with the trivial exception that exposed resist portion 97extends above the sidewalls of container hole 20. As in previousembodiments, a container capacitor may be formed in like fashion asshown in and described with reference to FIG. 7.

It will be readily apparent to those skilled in the art that similarresults could be obtained in this embodiment using a negativephotoresist for first resist layer 40, with appropriate and obviousmodification to reticle 235, and a positive photoresist for secondresist layer 45.

Memory Cells

FIG. 20 depicts one embodiment of a container structure as used in acontainer capacitor for a memory cell. The container structure is formedover a contact 15 to an active area of substrate 5. Container layer 30is formed between adjacent word lines 250, having structures wellunderstood in the art, and acts as the bottom plate of the containercapacitor.

Container layer 30 is covered by a dielectric layer 260. Container layer30 is formed in accordance with the invention. Dielectric layer 260 isan insulative material. Dielectric layer 260 is further covered by cellplate 270. Cell plate 270 is preferably conductively-doped polysilicon.Such memory cells are suitable for use in memory devices.

Memory Devices

FIG. 21 is a simplified block diagram of a memory device according toone embodiment of the invention. The memory device 300 includes an arrayof memory cells 302, address decoder 304, row access circuitry 306,column access circuitry 308, control circuitry 310, and Input/Outputcircuit 312. The memory can be coupled to an external microprocessor314, or memory controller for memory accessing. The memory receivescontrol signals from the processor 314, such as WE*, RAS* and CAS*signals. The memory is used to store data which is accessed via I/Olines. It will be appreciated by those skilled in the art thatadditional circuitry and control signals can be provided, and that thememory device of FIG. 21 has been simplified to help focus on theinvention. At least one of the memory cells has a container capacitor ofthe invention.

It will be understood that the above description of a DRAM (DynamicRandom Access Memory) is intended to provide a general understanding ofthe memory and is not a complete description of all the elements andfeatures of a DRAM. Further, the invention is equally applicable to anysize and type of memory circuit and is not intended to be limited to theDRAM described above. Other alternative types of devices include SRAM(Static Random Access Memory) or Flash memories. Additionally, the DRAMcould be a synchronous DRAM commonly referred to as SGRAM (SynchronousGraphics Random Access Memory), SDRAM (Synchronous Dynamic Random AccessMemory), SDRAM II, and DDR SDRAM (Double Data Rate SDRAM), as well asSynchlink or Rambus DRAMs.

As recognized by those skilled in the art, memory devices of the typedescribed herein are generally fabricated as an integrated circuitcontaining a variety of semiconductor devices. The integrated circuit issupported by a substrate. Integrated circuits are typically repeatedmultiple times on each substrate. The substrate is further processed toseparate the integrated circuits into dies as is well known in the art.

Semiconductor Dies

With reference to FIG. 22, in one embodiment, a semiconductor die 710 isproduced from a silicon wafer 700. A die is an individual pattern,typically rectangular, on a substrate that contains circuitry, orintegrated circuit devices, to perform a specific function. At least oneof the integrated circuit devices is a container capacitor as disclosedherein. A semiconductor wafer will typically contain a repeated patternof Such dies containing the same functionality. Die 710 may containcircuitry for the inventive memory device, as discussed above. Die 710may further contain additional circuitry to extend to such complexdevices as a monolithic processor with multiple functionality. Die 710is typically packaged in a protective casing (not shown) with leadsextending therefrom (not shown) providing access to the circuitry of thedie for unilateral or bilateral communication and control.

Circuit Modules

As shown in FIG. 23, two or more dies 710 may be combined, with orwithout protective casing, into a circuit module 800 to enhance orextend the functionality of an individual die 710. Circuit module 800may be a combination of dies 710 representing a variety of functions, ora combination of dies 710 containing the same functionality. Someexamples of a circuit module include memory modules, device drivers,power modules, communication modems, processor modules andapplication-specific modules and may include multilayer, multichipmodules. Circuit module 800 may be a subcomponent of a variety ofelectronic systems, such as a clock, a television, a cell phone, apersonal computer, an automobile, an industrial control system, anaircraft and others. Circuit module 800 will have a variety of leads 810extending therefrom and coupled to the dies 710 providing unilateral orbilateral communication and control.

FIG. 24 shows one embodiment of a circuit module as memory module 900.Memory module 900 generally depicts a Single Inline Memory Module (SIMM)or Dual Inline Memory Module (DIMM). A SIMM or DIMM is generally aprinted circuit board (PCB) or other support containining a series ofmemory devices. While a SIMM will have a single in-line set of contactsor leads, a DIMM will have a set of leads on each side of the supportwith each set representing separate I/O signals. Memory module 900contains multiple memory devices 910 contained on support 915, thenumber depending upon the desired bus width and the desire for parity.Memory module 900 may contain memory devices 910 on both sides ofsupport 915. Memory module 900 accepts a command signal from an externalcontroller (not shown) on a command link 920 and provides for data inputand data output on data links 930. The command link 920 and data links930 are connected to leads 940 extending from the support 915. Leads 940are shown for conceptual purposes and are not limited to the positionsshown in FIG. 24.

Electronic Systems

FIG. 25 shows an electronic system 1000 containing one or more circuitmodules 800. Electronic system 1000 generally contains a user interface1010. User interface 1010 provides a user of the electronic system 1000with some form of control or observation of the results of theelectronic system 1000. Some examples of user interface 1010 include thekeyboard, pointing device, monitor and printer of a personal computer;the tuning dial, display and speakers of a radio; the ignition switchand (,as pedal of an automobile; and the card reader, keypad, displayand currency dispenser of an automated teller machine. User interface1010 may further describe access ports provided to electronic system1000. Access ports are used to connect an electronic system to the moretangible user interface components previously exemplified. One or moreof the circuit modules 800 may be a processor providing some form ofmanipulation, control or direction of inputs from or outputs to userinterface 1010, or of other information either preprogrammed into, orotherwise provided to, electronic system 1000. As will be apparent fromthe lists of examples previously given, electronic system 1000 willoften contain certain mechanical components (not shown) in addition tocircuit modules 800 and user interface 1010. It will be appreciated thatthe one or more circuit modules 800 in electronic system 1000 can bereplaced by a single integrated circuit. Furthermore, electronic system1000 may be a subcomponent of a larger electronic system.

FIG. 26 shows one embodiment of an electronic system as memory system1100. Memory system 1100 contains one or more memory modules 900 and amemory controller 1110. Memory controller 1110 provides and controls abidirectional interface between memory system 1100 and an externalsystem bus 1120. Memory system 1100 accepts a command signal from theexternal bus 1120 and relays it to the one or more memory modules 900 ona command link 1130. Memory system 1100 provides for data input and dataoutput between the one or more memory modules 900 and external systembus 1120 on data links 1140.

FIG. 27 shows a further embodiment of an electronic system as a computersystem 1200. Computer system 1200 contains a processor 1210 and a memorysystem 1100 housed in a computer unit 1205. Computer system 1200 is butone example of an electronic system containing another electronicsystem, i.e., memory system 1100, as a subcomponent. Computer system1200 optionally contains user interface components. Depicted in FIG. 27are a keyboard 1220, a pointing device 1230, a monitor 1240, a printer1250 and a bulk storage device 1260. It will be appreciated that othercomponents are often associated with computer system 1200 such asmodems, device driver cards, additional storage devices, etc. It willfurther be appreciated that the processor 1210 and memory system 1100 ofcomputer system 1200 can be incorporated on a single integrated circuit.Such single package processing units reduce the communication timebetween the processor and the memory circuit.

CONCLUSION

Chemical-mechanical planarization (CMP) may inherently induce defects inthe manufacture of integrated circuits. Traditional processing forforming container capacitors utilizes CMP. The invention providesmethods of forming container capacitors without the need for CMP byproviding localized masking of the container holes. Container capacitorsof the invention are devoid of CMP-induccd variations and defects. Suchcontainer capacitors are especially suited for use in memory cells, andvarious apparatus incorporating such memory cells.

While the invention has been described and illustrated with respect toforming container capacitors for a memory cell, it should be apparentthat the same processing techniques can be used to form other containercapacitors for other applications as well as other container-shapedstructures.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat any arrangement which is calculated to achieve the same purpose maybe substituted for the specific embodiments shown. Many adaptations ofthe invention will be apparent to those of ordinary skill in the art.Accordingly, this application is intended to cover any adaptations orvariations of the invention. It is manifestly intended that thisinvention be limited only by the following claims and equivalentsthereof.

What is claimed is:
 1. A method of forming a semiconductor containerstructure, comprising: forming an insulating layer having a surface andoverlying a substrate; forming a container hole in the insulating layerand having a closed bottom, an open top and sidewalls extending betweenthe closed bottom and open top; forming a container layer at least onthe surface of the insulating layer and the sidewalls and closed bottomof the container hole; forming a resist layer overlying the containerlayer and filling the container hole, wherein the resist layer is of apositive resist type; selectively exposing the resist layer to energycapable of exposing the resist layer, thereby forming an exposed resistportion and an underexposed resist portion, wherein the underexposedresist portion fills at least a portion of the container hole; removingthe exposed resist portion, thereby forming an uncovered portion of thecontainer layer; removing the uncovered portion of the container layerusing a non-mechanical technique; and wherein selectively exposing theresist layer to energy capable of exposing the resist layer includesexposing the resist layer to energy having an angled incident whilerotating the substrate about an axis generally perpendicular to thesurface of the insulating layer.
 2. The method of claim 1, whereinforming an insulating layer further compriscs forming an insulatinglayer of an insulating material selected from the group consisting ofborophosphosilicate glass, oxides and nitrides.
 3. The method of claim1, wherein forming a container layer further comprises forming acontainer layer of hemispherical grain polysilicon.
 4. The method ofclaim 3, further comprising: conductively doping the container layer. 5.The method of claim 1, wherein selectively exposing the resist layer toenergy capable of exposing the resist layer further comprises exposingthe resist layer to a controlled energy dosage sufficient to expose aportion of the resist layer overlying the surface of the insulatinglayer and insufficient to expose a portion of the resist layer in thecontainer hole.
 6. The method of claim 5, wherein exposing the resistlayer to a controlled energy dosage further comprises exposing theresist layer to an energy dosage between about 125 mJ and 200 mJ.
 7. Themethod of claim 1, wherein selectively exposing the resist layer toenergy capable of exposing the resist layer further comprises exposingthe resist layer to energy having an angled incident to control a depthof penetration of the container hole.
 8. The method of claim 7, whereinexposing the resist layer to energy having an angled incident furthercomprises exposing the resist layer to energy having an angled incidentgenerally incapable of exposing at least some portion of the resistlayer in the container hole.
 9. The method of claim 1, whereinselectively exposing the resist layer to energy capable of exposing theresist layer further comprises exposing the resist layer to energy froma source having an angled incident while rotating the source about anaxis generally perpendicular to the surface of the insulating layer. 10.The method of claim 7, further comprising varying a wavelength of theenergy to further control the depth of penetration.
 11. The method ofclaim 1, wherein selectively exposing the resist layer to energy capableof exposing the resist layer further comprises exposing the resist layerto energy having at least one wavelength generally incapable ofpenetrating the container hole.
 12. The method of claim 1, whereinselectively exposing the resist layer to energy capable of exposing theresist layer further comprises exposing the resist layer to energy froman incoherent source having at least one wavelength generally incapableof penetrating the container hole.
 13. The method of claim 1, whereinthe processing proceeds in the order presented.
 14. The method of claim1, wherein selectively exposing the resist layer to energy capable ofexposing the resist layer further comprises exposing the resist layer toenergy generally incapable of exposing the resist layer.
 15. The methodof claim 1, wherein removing the uncovered portion of the containerlayer using a non-mechanical technique further comprises removing theuncovered portion of the container layer using a non-mechanicaltechnique selected from the group consisting of wet etch, etch andchemical dissolution.
 16. A method of forming a semiconductor containerstructure, comprising: forming an insulating layer having a surface andoverlying a substrate; defining a container hole in the insulating layerand having a closed bottom, an open top and sidewalls extending betweenthe closed bottom and open top; forming a container layer at least onthe surface of the insulating layer and the sidewalls and closed bottomof the container hole; forming a resist layer overlying the containerlayer and filling the container hole; exposing the substrate to energycapable of hardening the resist layer, thereby forming a hardened resistportion and an unhardened resist portion, wherein the hardened resistportion fills at least a portion of the container hole; removing theunhardened resist portion, thereby forming an uncovered portion of thecontainer layer; removing the uncovered portion of the container layerusing a non-mechanical technique; and wherein selectively exposing thesubstrate to energy capable of hardening the resist layer includesexposing the substrate to energy having an angled incident whilerotating the substrate about an axis generally perpendicular to thesurface of the insulating layer.
 17. The method of claim 16, whereinexposing the substrate to energy capable of hardening the resist layerfurther comprises exposing the substrate to thermal energy by a transfermethod selected from the group consisting of conductive heat transferand convective heat transfer.
 18. The method of claim 16, whereinexposing the substrate to energy capable of hardening the resist layerfurther comprises absorbing radiated energy by the substrate.
 19. Themethod of claim 16, wherein removing the uncovered portion of thecontainer layer using a non-mechanical technique further comprisesremoving the uncovered portion of the container layer using anon-mechanical technique selected from the group consisting of wet etch,etch and chemical dissolution.
 20. The method of claim 16, wherein theprocessing proceeds in the order presented.
 21. A method of forming asemiconductor container structure, comprising: forming an insulatinglayer having a surface and overlying a substrate; forming a first resistlayer overlying the insulating layer, wherein the first resist layer isof a first resist type; patterning the first resist layer using areticle to define a future container hole; forming the container hole inthe insulating layer and having a closed bottom, an open top andsidewalls extending between the closed bottom and open top; forming acontainer layer at least on the surface of the insulating layer and thesidewalls and closed bottom of the container hole; forming a secondresist layer overlying the container layer and filling the containerhole, wherein the second resist layer is of a second resist type,further wherein the second resist type is opposite the first resisttype; patterning the second resist layer using the reticle, therebyforming a hardened resist portion and an unhardened resist portion,wherein the hardened resist portion fills the container hole; removingthe unhardened resist portion, thereby forming an uncovered portion ofthe container layer; removing the uncovered portion of the containerlayer using a non-mechanical technique, and wherein at least one of thesteps of patterning the first resist layer and patterning the secondresist layer includes exposing a resist layer to energy having an angledincident while rotating the substrate about an axis generallyperpendicular to the surface of the insulating layer.
 22. The method ofclaim 21, wherein forming a first resist layer further comprises forminga first resist layer of positive resist material, further whereinforming a second resist layer further comprises forming a second resistlayer of negative resist material.
 23. The method of claim 21, whereinremoving the uncovered portion of the container layer using anon-mechanical technique further comprises removing the uncoveredportion of the container layer using a non-mechanical technique selectedfrom the group consisting of wet etch, etch and chemical dissolution.24. The method of claim 21, wherein the processing proceeds in the orderpresented.
 25. A method of localized masking of holes, comprising:forming a first support layer having a surface; forming a hole in thefirst support layer and having a closed bottom, an open top andsidewalls extending between the closed bottom and open top; forming aresist layer overlying the first support layer and filling the hole,wherein the resist layer is of a positive resist type; selectivelyexposing the resist layer to energy capable of exposing the resistlayer, thereby forming an exposed resist portion and an underexposedresist portion, wherein the underexposed resist portion fills at least aportion of the hole, wherein selectively exposing the resist layer toenergy capable of exposing the resist layer includes exposing the resistlayer to energy having an angled incident while rotating the firstsupport layer about an axis generally perpendicular to the surface ofthe first support layer; and removing the exposed resist portion. 26.The method of claim 25, further comprising: forming a second supportlayer interposed between the first support layer and the resist layer;uncovering a portion of the second support layer by removing the exposedresist portion, thereby forming an uncovered portion of the secondsupport layer; and removing the uncovered portion of the second supportlayer using a non-mechanical technique selected from the groupconsisting of wet etch, etch and chemical dissolution.
 27. The method ofclaim 25, wherein selectively exposing the resist layer to energycapable of exposing the resist layer further comprises exposing theresist layer to a controlled energy dosage sufficient to expose aportion of the resist layer overlying the surface of the first supportlayer and insufficient to expose a portion of the resist layer in thehole.
 28. The method of claim 27, wherein exposing the resist layer to acontrolled energy dosage further comprises exposing the resist layer toan energy dosage between about 125 mJ and 200 mJ.
 29. The method ofclaim 25, wherein exposing the resist layer to energy having an angledincident controlling a depth of energy penetration in the hole.
 30. Themethod of claim 29, wherein exposing the resist layer to energy havingan angled incident further comprises exposing the resist layer to energyhaving an angled incident generally incapable of exposing at least someportion of the resist layer in the hole.
 31. The method of claim 29,further comprising varying a wavelength of the energy to further controlthe depth of penetration.
 32. The method of claim 25, whereinselectively exposing the resist layer to energy capable of exposing theresist layer further comprises exposing the resist layer to energyhaving at least one wavelength generally incapable of penetrating thehole.
 33. The method of claim 25, wherein selectively exposing theresist layer to energy capable of exposing the resist layer furthercomprises exposing the resist layer to energy from an incoherent sourcehaving at least one wavelength generally incapable of penetrating thehole.
 34. The method of claim 25, wherein the processing proceeds in theorder presented.
 35. The method of claim 25, wherein selectivelyexposing the resist layer to energy capable of exposing the resist layerfurther comprises exposing the resist layer to energy generallyincapable of exposing the resist layer.
 36. A method of localizedmasking of holes, comprising: forming a first support layer having asurface; defining a hole in the first support layer and having a closedbottom, an open top and sidewalls extending between the closed bottomand open top; forming a resist layer overlying the first support layerand filling the hole, wherein the resist layer is of a positive resisttype; exposing the first support layer to energy capable of hardeningthe resist layer, thereby forming a hardened resist portion and anunhardened resist portion, wherein the hardened resist portion fills atleast a portion of the hole, wherein exposing the first support layerincludes exposing the resist layer to energy having an angled incidentwhile rotating the first support layer about an axis generallyperpendicular to the surface of the first support layer; and removingthe unhardened resist portion.
 37. The method of claim 36, furthercomprising: forming a second support layer interposed between the firstsupport layer and the resist layer; uncovering a portion of the secondsupport layer by removing the unhardened resist portion, thereby formingan uncovered portion of the second support layer; and removing theuncovered portion of the second support layer using a non-mechanicaltechnique selected from the group consisting of wet etch, etch andchemical dissolution.
 38. The method of claim 36, wherein exposing thefirst support layer to energy capable of hardening the resist layerfurther comprises exposing the first support layer to thermal energy bya transfer method selected from the group consisting of conductive heattransfer and convective heat transfer.
 39. The method of claim 36,wherein exposing the first support layer to energy capable of hardeningthe resist layer further comprises absorbing radiated energy by thefirst support layer.
 40. The method of claim 36, wherein the processingproceeds in the order presented.
 41. A method of localized masking ofholes, comprising: forming a first support layer having a surface;forming a first resist layer overlying the first support layer, whereinthe first resist layer is of a first resist type; patterning the firstresist layer using a reticle to define a future hole; forming the holein the first support layer and having a closed bottom, an open top andsidewalls extending between the closed bottom and open top; forming asecond resist layer overlying the first support layer and filling thehole, wherein the second resist layer is of a second resist type,further wherein the second resist type is opposite the first resisttype; patterning the second resist layer using the reticle, therebyforming a hardened resist portion and an unhardened resist portion,wherein the hardened resist portion fills the hole; removing theunhardened resist portion, and wherein patterning the first resist layerincludes exposing the first resist layer to energy having an angledincident while rotating the first support layer about an axis generallyperpendicular to the surface of the first support layer.
 42. The methodof claim 41, further comprising: forming a second support layerinterposed between the first support layer and the second resist layer;uncovering a portion of the second support layer by removing theunhardened resist portion, thereby forming an uncovered portion of thesecond support layer; and removing the uncovered portion of the secondsupport layer using a non-mechanical technique selected from the groupconsisting of wet etch, etch and chemical dissolution.
 43. The method ofclaim 41, wherein forming a first resist layer further comprises forminga first resist layer of positive resist material, further whereinforming a second resist layer further comprises forming a second resistlayer of negative resist material.
 44. The method of claim 41, whereinthe processing proceeds in the order presented.
 45. A method oflocalized masking of holes, comprising: forming a first support layerhaving a surface; forming a hole in the first support layer and having aclosed bottom, an open top and sidewalls extending between the closedbottom and open top; forming a resist layer overlying the first supportlayer and filling the hole, wherein the resist layer is of a positiveresist type; selectively exposing the resist layer to energy capable ofexposing the resist layer, thereby forming an exposed resist portion andan underexposed resist portion, wherein the underexposed resist portionfills at least a portion of the hole, wherein selectively exposing theresist layer to energy capable of exposing the resist layer includesexposing the resist layer to energy from a source having an angledincident while rotating the source about an axis generally perpendicularto the surface of the first support layer; and removing the exposedresist portion.
 46. The method of claim 45, further comprising: forminga second support layer interposed between the first support layer andthe resist layer; uncovering a portion of the second support layer byremoving the exposed resist portion, thereby forming an uncoveredportion of the second support layer; and removing the uncovered portionof the second support layer using a non-mechanical technique selectedfrom the group consisting of wet etch, etch and chemical dissolution.47. The method of claim 45, wherein selectively exposing the resistlayer to energy capable of exposing the resist layer includes exposingthe resist layer to a controlled energy dosage sufficient to expose aportion of the resist layer overlying the surface of the first supportlayer and insufficient to expose a portion of the resist layer in thehole.
 48. The method of claim 47, wherein exposing the resist layer to acontrolled energy dosage includes exposing the resist layer to an energydosage between about 125 mJ and 200 mJ.
 49. The method of claim 45,wherein selectively exposing the resist layer to energy capable ofexposing the resist layer includes varying a wavelength of the energy tocontrol depth of energy penetration.
 50. The method of claim 45, whereinselectively exposing the resist layer to energy capable of exposing theresist layer includes exposing the resist layer to energy having atleast one wavelength gene rally incapable of penetrating the hole. 51.The method of claim 45, wherein selectively exposing the resist layer toenergy capable of exposing the resist layer includes exposing the resistlayer to energy from an incoherent source having at least one wavelengthgenerally incapable of penetrating the hole.
 52. The method of claim 45,wherein the processing proceeds in the order presented.
 53. The methodof claim 45, wherein selectively exposing the resist layer to energycapable of exposing the resist layer includes exposing the resist layerto energy generally incapable of exposing the resist layer.
 54. A methodof forming a semiconductor container structure, comprising: forming aninsulating layer having a surface and overlying a substrate; forming acontainer hole in the insulating layer and having a closed bottom, anopen top and sidewalls extending between the closed bottom and open top;forming a container layer at least on the surface of the insulatinglayer and the sidewalls and closed bottom of the container hole; forminga positive-type resist layer overlying the container layer and fillingthe container hole; selectively exposing the resist layer to energycapable of exposing the resist layer, thereby forming an exposed resistportion and an underexposed resist portion, wherein the underexposedresist portion fills at least a portion of the container hole, whereinthe resist layer is exposed to energy in the range of about 125 mJ and200 mJ; removing the exposed resist portion, thereby forming anuncovered portion of the container layer; and removing the uncoveredportion of the container layer using a non-mechanical technique.
 55. Themethod of claim 54, wherein forming the insulating layer includesforming an insulating layer of an insulating material selected from thegroup consisting of borophosphosilicate glass, oxides and nitrides. 56.The method of claim 54, wherein forming the container layer includesforming a container layer of hemispherical grain polysilicon.
 57. Themethod of claim 56, wherein forming the container layer includesconductively doping the container layer.
 58. The method of claim 57,wherein selectively exposing the resist layer to energy capable ofexposing the resist layer includes exposing the resist layer to energyhaving an angled incident to control a depth of penetration of thecontainer hole.
 59. The method of claim 58, wherein exposing the resistlayer to energy having an angled incident includes exposing the resistlayer to energy having an angled incident generally incapable ofexposing at least some portion of the resist layer in the containerhole.
 60. The method of claim 58, wherein selectively exposing theresist layer to energy capable of exposing the resist layer includesexposing the resist layer to energy having an angled incident whilerotating the substrate about an axis generally perpendicular to thesurface of the insulating layer.
 61. The method of claim 58, whereinselectively exposing the resist layer to energy capable of exposing theresist layer includes exposing the resist layer to energy from a sourcehaving an angled incident while rotating the source about an axisgenerally perpendicular to the surface of the insulating layer.
 62. Themethod of claim 61, wherein selectively exposing the resist layer toenergy capable of exposing the resist layer includes varying awavelength of the energy to further control the depth of penetration.63. The method of claim 58, wherein selectively exposing the resistlayer to energy capable of exposing the resist layer includes exposingthe resist layer to energy having at least one wavelength generallyincapable of penetrating the container hole.
 64. The method of claim 58,wherein selectively exposing the resist layer to energy capable ofexposing the resist layer includes exposing the resist layer to energyfrom an incoherent source having at least one wavelength generallyincapable of penetrating the container hole.
 65. The method of claim 58,wherein the processing proceeds in the order presented.
 66. A method offorming a semiconductor container structure, comprising: forming aninsulating layer having a surface and overlying a substrate; forming afirst resist layer overlying the insulating layer, wherein the firstresist layer is of a first resist type; patterning the first resistlayer using a reticle to define a future container hole; forming thecontainer hole in the insulating layer and having a closed bottom, anopen top and sidewalls extending between the closed bottom and open top;forming a container layer at least on the surface of the insulatinglayer and the sidewalls and closed bottom of the container hole; forminga second resist layer overlying the container layer and filling thecontainer hole, wherein the second resist layer is of a second resisttype, further wherein the second resist type is opposite the firstresist type; patterning the second resist layer using the reticle,thereby forming a hardened resist portion and an unhardened resistportion, wherein the hardened resist portion fills the container hole;removing the unhardened resist portion, thereby forming an uncoveredportion of the container layer; removing the uncovered portion of thecontainer layer using a non-mechanical technique, and wherein both ofthe steps of patterning the first resist layer and patterning the secondresist layer include exposing a resist layer to energy having an angledincident while rotating the substrate about an axis generallyperpendicular to the surface of the insulating layer.
 67. The method ofclaim 66, wherein forming a first resist layer includes forming a firstresist layer of positive resist material, and wherein forming a secondresist layer includes forming a second resist layer of negative resistmaterial.
 68. The method of claim 66, wherein removing the uncoveredportion of the container layer using a non-mechanical technique includesremoving the uncovered portion of the container layer using anon-mechanical technique selected from the group consisting of wet etch,etch and chemical dissolution.
 69. The method of claim 66, wherein theprocessing proceeds in the order presented.
 70. A method of forming asemiconductor container structure, comprising: forming an insulatinglayer having a surface and overlying a substrate; forming a first resistlayer overlying the insulating layer, wherein the first resist layer isof a first resist type; patterning the first resist layer using areticle to define a future container hole; forming the container hole inthe insulating layer and having a closed bottom, an open top andsidewalls extending between the closed bottom and open top; forming acontainer layer at least on the surface of the insulating layer and thesidewalls and closed bottom of the container hole; forming a secondresist layer overlying the container layer and filling the containerhole, wherein the second resist layer is of a second resist type,wherein the second resist type is opposite the first resist type;patterning the second resist layer using the reticle, thereby forming ahardened resist portion and an unhardened resist portion, wherein thehardened resist portion fills the container hole; removing theunhardened resist portion, thereby forming an uncovered portion of thecontainer layer; removing the uncovered portion of the container layerusing a non-mechanical technique, and wherein at least one of the stepsof patterning the first resist layer and patterning the second resistlayer includes exposing a resist layer to energy having an angledincident while rotating a source of the energy about an axis generallyperpendicular to the surface of the insulating layer.
 71. The method ofclaim 70, wherein forming a first resist layer includes forming a firstresist layer of positive resist material, and wherein forming a secondresist layer includes forming a second resist layer of negative resistmaterial.
 72. The method of claim 70, wherein removing the uncoveredportion of the container layer using a non-mechanical technique includesremoving the uncovered portion of the container layer using anon-mechanical technique selected from the group consisting of wet etch,etch and chemical dissolution.
 73. The method of claim 70, wherein theprocessing proceeds in the order presented.
 74. A method of forming asemiconductor container structure, comprising: forming an insulatinglayer having a surface and overlying a substrate; forming a containerhole in the insulating layer and having a closed bottom, an open top andsidewalls extending between the closed bottom and open top; forming acontainer layer at least on the surface of the insulating layer and thesidewalls and closed bottom of the container hole; forming a resistlayer overlying the container layer and filling the container hole,wherein the resist layer is of a positive resist type; selectivelyexposing the resist layer to energy from an incoherent source having atleast one wavelength generally incapable of penetrating the containerhole and capable of exposing the resist layer, thereby forming anexposed resist portion and an underexposed resist portion, wherein theunderexposed resist portion fills at least a portion of the containerhole; removing the exposed resist portion, thereby forming an uncoveredportion of the container layer; and removing the uncovered portion ofthe container layer using a non-mechanical technique.